Hynix Semiconductor Inc.


Semiconductors are essential to all IT products, and its performance often determines the performance of the final products. SK hynix is the global leader in producing semiconductor, such as DRAM and NAND flash and System IC including CMOS Image Sensors. Since pilot production of Korea’s first 16Kb SRAM in 1984, SK hynix consistently led the industry with smaller, faster and lower power semiconductor.




Product Name: H5GQ1H24BFR
Product Category: Memory Upgrade - Memory

The GDDR5 SGRAM is a high speed dynamic random access memory designed for applications requiring high bandwidth.

GDDR5 devices contain the following number of bits:1Gb has 1,073,741,824 bits and sixteen banksThe GDDR5 SGRAM uses a 8n prefetch architecture and DDR interface to achieve high speed operation.

 

The device can be configured to operate in x32 mode or x16 (clamshell) mode. The mode is detected during device initialization.

Product Name: H5TC1G83EFR
Product Category: Memory Upgrade - Memory

The H5TC1G83EFR-xxA(I) and H5TC1G63EFR-xxA(I) are a 1Gb low power Double Data Rate III (DDR3L) Synchronous DRAM, ideally suited for the main memory applications which requires large memory density, high bandwidth and low power operation at 1.35V. SK Hynix DDR3L SDRAM provides backward compatibility with the 1.5V DDR3 based environment without any changes. (Please refer to the SPD information for details.)

Product Name: H5TC2G83DFR
Product Category: Memory Upgrade - Memory

The H5TC2G83DFR-xxA(I) and H5TC2G63DFR-xxA(I) are a 2Gb low power Double Data Rate III (DDR3L) Synchronous DRAM, ideally suited for the main memory applications which requires large memory density, high bandwidth and low power operation at 1.35V. SK Hynix DDR3L SDRAM provides backward compatibility with the 1.5V DDR3 based environment without any changes. (Please refer to the SPD information for details.)

Product Name: HY5DU561622CT
Product Category: OEM Memory - Memory

The Hynix HY5DU561622CT is a 268,435,456-bit CMOS Double Data Rate(DDR) Synchronous DRAM, ideally suited for the point-to-point applications which requires high bandwidth.

Product Name: HY5DU561622CTP
Product Category: OEM Memory - Memory

The Hynix HY5DU561622CTP is a 268,435,456-bit CMOS Double Data Rate(DDR) Synchronous DRAM, ideally suited for the point-to-point applications which requires high bandwidth.

Product Name: HY5PS561621AFP
Product Category: Design Verification

Read and write accesses to the DDR2 SDRAM are burst oriented; accesses start at a selected location and continue for a burst length of four or eight in a programmed sequence. Accesses begin with the registration of an Active command, which is then followed by a Read or Write command. The address bits registered coincident with the active command are used to select the bank and row to be accessed (BA0-BA1 select the bank; A0-A12 select the row).

Product Name: HY5PS561621BFP
Product Category: OEM Memory - Memory

Read and write accesses to the DDR2 SDRAM are burst oriented; accesses start at a selected location and continue for a burst length of four or eight in a programmed sequence. Accesses begin with the registration of an Active command, which is then followed by a Read or Write command.


San 136-1
Ami-ri Bubal-eub Icheon-si,Gyeonggi -do 467-701
Korea (North)
Phone: 82-31-630-4114
Fax: 82-31-630-4103
Contact us
Url: http://www.hynix.com/en/index.jsp
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